Local potential mapping along channels in field-effect transistors shows that the single-crystal MoS 2 grains in our film are well connected, with interfaces that do not degrade the electrical conductivity. Even though the interaction between the growth substrate and MoS 2 is strong enough to induce lattice alignment via van der Waals interaction, we can easily transfer the grown material and fabricate devices. Optical absorbance spectra acquired over large areas show significant absorbance in the high-energy part of the spectrum, indicating that MoS 2 could also be interesting for harvesting this region of the solar spectrum and fabrication of UV-sensitive photodetectors. We show that the monolayer film is composed of coalescing single islands with limited numbers of lattice orientation due to an epitaxial growth mechanism. Here, we report on the growth of high-quality monolayer MoS 2 with control over lattice orientation. This is needed to minimize or even avoid the formation of grain boundaries, detrimental to electrical, optical, and mechanical properties of MoS 2 and other 2D semiconductors. Control over lattice orientation during growth remains a challenge. Large-area growth methods are needed to open the way to applications. Two-dimensional semiconductors such as MoS 2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting.
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